Ionization effect on SiGe HBT power limitation in the millimeter wave frequency range
作者： Nicolas Derrier , Franck Pourchon , Christophe Gaquiere , Alexandre Pottrain , Daniel Gloria
DOI:
关键词:
摘要: Load-pull measurements at 94 GHz are performed on last-generation SiGe HBTs, in order to understand the origins of power constraints presence millimeter-wave excitations. A very accurate HICUM model is used for devices under test correlate measurement results and physical phenomena. In such a way, we investigate ionization self-heating effects limitations high-frequency nonlinear device operation. We show that impact major limitation improvement.
参考文章(4)
M. Rickelt, H.-M. Rein, E. Rose, Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors IEEE Transactions on Electron Devices. ,vol. 48, pp. 774- 783 ,(2001) , 10.1109/16.915725
P. Chevalier, F. Pourchon, T. Lacave, G. Avenier, Y. Campidelli, L. Depoyan, G. Troillard, M. Buczko, D. Gloria, D. Celi, C. Gaquiere, A. Chantre, A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f MAX bipolar/bicmos circuits and technology meeting. pp. 1- 4 ,(2009) , 10.1109/BIPOL.2009.5314250
B. Heinemann, R. Barth, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, D. Knoll, R. Kurps, M. Lisker, S. Marschmeyer, H. Rucker, D. Schmidt, J. Schmidt, M. A. Schubert, B. Tillack, C. Wipf, D. Wolansky, Y. Yamamoto, SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay international electron devices meeting. ,(2010) , 10.1109/IEDM.2010.5703452
A. Inoue, S. Nakatsuka, R. Hattori, Y. Matsuda, The maximum operating region in SiGe HBTs for RF power amplifiers international microwave symposium. ,vol. 2, pp. 1023- 1026 ,(2002) , 10.1109/MWSYM.2002.1011805