SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay
作者： B. Heinemann , R. Barth , D. Bolze , J. Drews , G. G. Fischer
DOI: 10.1109/IEDM.2010.5703452
关键词:
摘要: A SiGe HBT technology featuring f T/f max/BV CEO= 300GHz/500GHz/1.6 V and a minimum CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to our previous SiGe HBT generations originates from lateral device scaling, a reduced thermal budget, and changes of the emitter and base composition, of the salicide resistance as well as of the low-doped collector formation.
sci-hub.se 参考文章(11)
Erik Ojefors, Franck Pourchon, Ullrich R. Pfeiffer, Pascal Chevalier, A 160-GHz low-noise downconverter in a SiGe HBT technology european microwave conference. pp. 521- 524 ,(2010)
B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, Th. Grabolla, U. Haak, W. Hoppner, D. Knoll, K. Kopke, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, H. Rucker, P. Schley, D. Schmidt, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto, A low-parasitic collector construction for high-speed SiGe:C HBTs international electron devices meeting. pp. 251- 254 ,(2004) , 10.1109/IEDM.2004.1419123
Ullrich R Pfeiffer, Erik Ojefors, Yan Zhao, A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz international solid-state circuits conference. pp. 416- 417 ,(2010) , 10.1109/ISSCC.2010.5433832
A. Fox, B. Heinemann, R. Barth, D. Bolze, J. Drews, U. Haak, D. Knoll, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, H. Rucker, P. Schley, D. Schmidt, B. Tillack, G. Weidner, C. Wipf, D. Wolansky, Y. Yamamoto, SiGe HBT module with 2.5 ps gate delay international electron devices meeting. pp. 1- 4 ,(2008) , 10.1109/IEDM.2008.4796799
B Heinemann, R Barth, D Knoll, H Rücker, B Tillack, W Winkler, High-Performance BiCMOS Technologies without Epitaxially-Buried Subcollectors and Deep Trenches international sige technology and device meeting. ,vol. 22, pp. 1- 2 ,(2006) , 10.1088/0268-1242/22/1/S36
Herbert Knapp, Thomas F. Meister, Wolfgang Liebl, Klaus Aufinger, Herbert Schafer, Josef Bock, Sabine Boguth, Rudolf Lachner, 168 GHz dynamic frequency divider in SiGe:C bipolar technology bipolar/bicmos circuits and technology meeting. pp. 190- 193 ,(2009) , 10.1109/BIPOL.2009.5314242
Erik Ojefors, Bernd Heinemann, Ullrich R. Pfeiffer, A 325 GHz frequency multiplier chain in a SiGe HBT technology radio frequency integrated circuits symposium. pp. 91- 94 ,(2010) , 10.1109/RFIC.2010.5477301
T. Lacave, P. Chevalier, Y. Campidelli, M. Buczko, L. Depoyan, L. Berthier, G. Avenier, C. Gaquiere, A. Chantre, Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs bipolar/bicmos circuits and technology meeting. pp. 49- 52 ,(2010) , 10.1109/BIPOL.2010.5667965
P. Chevalier, F. Pourchon, T. Lacave, G. Avenier, Y. Campidelli, L. Depoyan, G. Troillard, M. Buczko, D. Gloria, D. Celi, C. Gaquiere, A. Chantre, A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f MAX bipolar/bicmos circuits and technology meeting. pp. 1- 4 ,(2009) , 10.1109/BIPOL.2009.5314250
S. Van Huylenbroeck, A. Sibaja-Hernandez, R. Venegas, S. You, G. Winderickx, D. Radisic, W. Lee, P. Ong, T. Vandeweyer, N. D. Nguyen, K. De Meyer, S. Decoutere, A 400GHz f MAX fully self-aligned SiGe:C HBT architecture bipolar/bicmos circuits and technology meeting. pp. 5- 8 ,(2009) , 10.1109/BIPOL.2009.5314244