Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling

摘要: The present work investigates the technology development of state-of-the-art SiGe and SiGeC Heterojunction Bipolar Transistors (HBT) by means computer aided design (TCAD). objective this is to obtain an advanced HBT very close real device not only in its process fabrication steps, but also physical behavior, geometric architecture, electrical results. This investigation may lead achieve best performances for devices studied, particular a maximum operating frequency 500 GHz. results should help more realistic simulations, better understanding charge transport, facilitate optimization devices.The TCAD simulation kits SiGe/SiGeC HBTs developed during our have been carried out framework STMicroelectronics bipolar evolution. In order accurate simulations we used, developed, calibrated implemented adequate models, models extraction methodologies. To knowledge, first approach which takes into account impact strain, germanium carbon content base, both: simulations.In will with successive evolutions B3T, B4T B5T technologies. For each new fMAX improves 100 GHz, thus B3T matches 300 400 respectively.Chapter one introduces heterojunction technologies their principles. chapter deals high AC transistor operation, methods carrier transport extremely scaled HBTs.Chapter two analyzes adapted strained alloys used devices. important synthesis leading selection, implementation dedicated simulation.Chapter three describes platform device. described together methodology simulate simulations.Chapter four architectures work. We propose low-cost structures less demanding performance requirements highly performing higher cost production. architecture has manufactured clean-room deeply studied chapter. main steps analyzed find keys parameters increase without degrading other characteristics. At end obtained elaborate taking trade-off different key working at GHz fMAX.