Novel collector design for high-speed SiGe:C HBTs
作者： B. Heinemann , H. Rucker , R. Barth , J. Bauer , D. Bolze
DOI: 10.1109/IEDM.2002.1175953
关键词:
摘要: … The new SiGe:C HBT module combines highest RF performance and high yield with a simple BiCMOS integration scheme, allowing easy migration from one CMOS generation to the …
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