Optimization of vertical profiles of SiGe HBT/BiCMOS by promoting emitter diffusion process
作者： M. Miura , H. Shimamoto , R. Hayami , A. Kodama , T. Tominari
DOI: 10.1109/BIPOL.2004.1365753
关键词:
摘要: A new concept, promoting emitter diffusion (PED) process, by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation exceeded 200 GHz when annealing temperature was increased from 885/spl deg/C to 1000/spl deg/C. This PED process concept based on fact that phosphorus can more than compensate boron decreased base thickness.
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