Prediction of thermal resistance in trench isolated bipolar device structures
作者： D.J. Walkey , T.J. Smy , H. Tran , D. Marchesan , M. Schroter
DOI: 10.1109/BIPOL.1998.741926
关键词:
摘要: A model is proposed for predicting the thermal resistance of a trench isolated device structure. The prediction Nortel's 0.35 /spl mu/m 35 GHz f/sub T/ bipolar process found to be within an average 5% measured values three different emitter lengths over two wafers.
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