Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
作者： S. Voldman , P. Juliano , R. Johnson , N. Schmidt , A. Joseph
DOI: 10.1109/RELPHY.2000.843932
关键词:
摘要: This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT). Transmission line pulse (TLP) ESD human body model (HBM) wafer-level reliability testing, failure analysis simulation of SiGe HBT devices is completed for characterization evaluation the robustness a BiCMOS technology.
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