Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology
作者： James W. Adkisson , John J. Pekarik , Qizhi Liu , David L. Harame , Kevin K. Chan
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摘要: A method of forming a heterojunction bipolar transistor. The includes providing structure comprising at least an intrinsic base region and emitter pedestal region. stack is formed on the comprises polysilicon layer top sacrificial oxide layer. trench in structure. circumscribes stack. An extrinsic two regions around by selective epitaxial growth process to create bridge over trench. connects regions. opening provided exposes portion opening.
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