Layout-aware design methodology for a 75GHz power amplifier in a 55nm SiGe technology

作者: David del Rio , Iñaki Gurutzeaga , Hector Solar , Andoni Beriain , Roc Berenguer

DOI: 10.1016/J.VLSI.2015.07.010

关键词:

摘要: This paper describes a method to design mmW PAs, by modeling the electromagnetic behavior of all passive structures and layout interconnections using 3D-EM solver. It allows optimization quality factor capacitors (Q-factors>20 can be obtained at 80GHz), access points arrangement power transistor cells. The is applied an E-Band PA implemented in 55nm SiGe BiCMOS technology. presents maximum gain 21.7dB 74GHz, with 3-dB bandwidth covering from 72.6 75.6GHz. output P1dB 13.8dBm 75GHz peak PAE 14.1%. Method for layout-aware millimeter-wave PAs.Custom MOM Q>20 mm-wave frequencies are designed.The arrangement, connections optimized.The has been low-E-Band PA. Its most significant parameters (power gain, bandwidth, 1dB compression point efficiency) have measured compared simulation results, good agreement between them. covers 75GHz, this These performance metrics comparable other state-of-the-art devices make capable transmitting multi-gigabit signals over E-band wireless links.The PA.There measurement results.The other-state-of-the-art PAs.

参考文章(22)
Wilhelm Keusgen, A. Hamidian, G. Boeck, V. Subramanian, Van-Hoang Do, Layout design considerations for 60 GHZ SiGe power amplifiers international conference on microwaves radar wireless communications. pp. 1- 4 ,(2008)
Eric Kerherve, Nejdat Demirel, Robert Plana, Denis Pache, 79GHz BiCMOS single-ended and differential power amplifiers european microwave conference. pp. 1690- 1693 ,(2010)
Roee Ben Yishay, Roi Carmon, Oded Katz, Benny Sheinman, Danny Elad, A 20dBm E-band power amplifier in SiGe BiCMOS technology 2012 42nd European Microwave Conference. pp. 1079- 1082 ,(2012) , 10.23919/EUMC.2012.6459375
Kunal Datta, Hossein Hashemi, Performance Limits, Design and Implementation of mm-Wave SiGe HBT Class-E and Stacked Class-E Power Amplifiers IEEE Journal of Solid-state Circuits. ,vol. 49, pp. 2150- 2171 ,(2014) , 10.1109/JSSC.2014.2353800
Yi Zhao, John R. Long, A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS IEEE Journal of Solid-state Circuits. ,vol. 47, pp. 1981- 1997 ,(2012) , 10.1109/JSSC.2012.2201275
Jenny Yi-Chun Liu, Roc Berenguer, Mau-Chung Frank Chang, Millimeter-Wave Self-Healing Power Amplifier With Adaptive Amplitude and Phase Linearization in 65-nm CMOS IEEE Transactions on Microwave Theory and Techniques. ,vol. 60, pp. 1342- 1352 ,(2012) , 10.1109/TMTT.2012.2189119
Seitaro Kawai, Ryo Minami, Yuki Tsukui, Yasuaki Takeuchi, Hiroki Asada, Ahmed Musa, Rui Murakami, Takahiro Sato, Qinghong Bu, Ning Li, Masaya Miyahara, Kenichi Okada, Akira Matsuzawa, A digitally-calibrated 20-Gb/s 60-GHz direct-conversion transceiver in 65-nm CMOS 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). pp. 137- 140 ,(2013) , 10.1109/RFIC.2013.6569543
Hiromitsu Uchida, Kazuhiko Nakahara, Norio Takeuchi, Makoto Matsunaga, Yasushi Itoh, Stabilization of millimeter‐wave multistage amplifier using amplitude‐and‐phase setting circuits Electronics and Communications in Japan Part Ii-electronics. ,vol. 84, pp. 26- 36 ,(2001) , 10.1002/ECJB.1077
Dixian Zhao, Patrick Reynaert, 14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS international solid-state circuits conference. ,vol. 57, pp. 248- 249 ,(2014) , 10.1109/ISSCC.2014.6757420
José Luis González, Baudouin Martineau, Didier Belot, On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications Microelectronics Journal. ,vol. 43, pp. 582- 591 ,(2012) , 10.1016/J.MEJO.2012.04.003