作者: David del Rio , Iñaki Gurutzeaga , Hector Solar , Andoni Beriain , Roc Berenguer
DOI: 10.1016/J.VLSI.2015.07.010
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摘要: This paper describes a method to design mmW PAs, by modeling the electromagnetic behavior of all passive structures and layout interconnections using 3D-EM solver. It allows optimization quality factor capacitors (Q-factors>20 can be obtained at 80GHz), access points arrangement power transistor cells. The is applied an E-Band PA implemented in 55nm SiGe BiCMOS technology. presents maximum gain 21.7dB 74GHz, with 3-dB bandwidth covering from 72.6 75.6GHz. output P1dB 13.8dBm 75GHz peak PAE 14.1%. Method for layout-aware millimeter-wave PAs.Custom MOM Q>20 mm-wave frequencies are designed.The arrangement, connections optimized.The has been low-E-Band PA. Its most significant parameters (power gain, bandwidth, 1dB compression point efficiency) have measured compared simulation results, good agreement between them. covers 75GHz, this These performance metrics comparable other state-of-the-art devices make capable transmitting multi-gigabit signals over E-band wireless links.The PA.There measurement results.The other-state-of-the-art PAs.