79GHz BiCMOS single-ended and differential power amplifiers
作者： Eric Kerherve , Nejdat Demirel , Robert Plana , Denis Pache
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摘要: This paper presents the performance of 79GHz power amplifiers (PAs) for automotive short range radar (SRR) application. A single-ended four stage common emitter circuit topology and a differential PA with integrated baluns are fabricated using 0.13µm SiGe BiCMOS process. The design measured results monolithic low-voltage PAs reported. PA, which is based on delivers 18dBm maximum output 13.5dBm at 1dB compression (P ). achieves 21.5dB gain shows 8.2% added efficiency (PAE) from 1.8V supply voltage 79 GHz. amplifier was fully including matching elements, bias very small baluns. chip occupies an area 0.46mm2 0.7mm2 configuration respectively.
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