14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS
作者： Dixian Zhao , Patrick Reynaert
DOI: 10.1109/ISSCC.2014.6757420
关键词: Power bandwidth 、 CMOS 、 Power (physics) 、 Electronic engineering 、 Broadband 、 Amplifier 、 Physics 、 RF power amplifier 、 E band 、 Power dividers and directional couplers 、 Electrical engineering
摘要: This paper reports a fully integrated 40nm CMOS PA that utilizes broadband parallel-series power combiner to achieve an output (POUT) of 20.9dBm with more than 15GHz small-signal 3dB bandwidth (BW-3dB) and 22% PAE at 0.9V supply. The in-band variation P1dB is only ±0.25dB. silicon-based covers both 71-to-76GHz 81-to-86GHz bands uniform gain, PAE.
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