A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS
作者： Yi Zhao , John R. Long
DOI: 10.1109/JSSC.2012.2201275
关键词: Wideband 、 Splitter 、 Amplifier 、 Materials science 、 Balun 、 Capacitance 、 Impedance matching 、 BiCMOS 、 Insertion loss 、 Electrical engineering
摘要: … The new transformer balun power combiner developed in this work minimizes undesired coupling between the output bondpad, primary, and secondary transformer windings through …
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