Insulator at the ultrathin limit: MgO on Ag(001).
作者： François Patthey , Laurent Libioulle , Massimiliano Stengel , Alessandro De Vita , Wolf-Dieter Schneider
DOI: 10.1103/PHYSREVLETT.87.276801
关键词: Local density of states 、 Scanning tunneling spectroscopy 、 Density functional theory 、 Electrochemical scanning tunneling microscope 、 Spin polarized scanning tunneling microscopy 、 Scanning tunneling microscope 、 Condensed matter physics 、 Band gap 、 Materials science 、 Epitaxy
摘要: The electronic structure and morphology of ultrathin MgO films epitaxially grown on Ag(001) were investigated using low-temperature scanning tunneling spectroscopy microscopy. Layer-resolved differential conductance (dI/dU) measurements reveal that, even at a film thickness three monolayers, band gap about 6 eV is formed corresponding to that the MgO(001) single-crystal surface. This finding confirmed by layer-resolved calculations local density states based functional theory.
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