Development of laser diagnostic probes for chemical vapor deposition of InP/InGaAsP epitaxial layers
作者： V. M. Donnelly , R. F. Karlicek
DOI: 10.1063/1.331512
关键词: Impurity 、 Laser 、 Materials science 、 Excimer laser 、 Layer (electronics) 、 Analytical chemistry 、 Epitaxy 、 Chemical vapor deposition 、 Spectroscopy 、 Dye laser
摘要: Laser spectroscopic methods have been developed for the detection of PH3, P2, AsH3, As2, InCl, and GaCl, using both tunable‐dye‐laser induced fluorescence excimer laser excitation. These are primary reactants participating in chemical vapor deposition (CVD) InP/InGaAsP epitaxial layers. Using a reaction tube designed to simulate CVD growth reactor, limits measured all these species well below those levels typically employed during layer growth. Specific applications outlined, several examples given relating techniques conditions expected
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