Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction
作者： Zhen Guo , Dongxu Zhao , Yichun Liu , Dezhen Shen , Jiying Zhang
DOI: 10.1063/1.3003877
关键词: Wide-bandgap semiconductor 、 Photodetector 、 Nanowire 、 Optoelectronics 、 Materials science 、 Ultraviolet light 、 Photoresistor 、 Heterojunction 、 Diode 、 Photodiode
摘要: Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by magnetron cosputtering method. The nanowire/n-Si heterojunction showed good diode characteristics with rectification ratio of above 1.6×102 at 4V in the dark. Experiments demonstrated that could be used to detect either visible or ultraviolet light easily controlling polarity voltage applied heterojunction. spectral response device will discussed terms band diagrams and carrier diffusion process.
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