Particle statistics and transport in compensated semiconductors with localized charge carriers

摘要: A comprehensive theory has been set up to deal with carrier excitation and thermoelectric effects in small‐polaron materials characterized by diffusive motion of independent charge carriers. The model involves transport states populated carriers which originate from a defect levels that are partially compensated deep‐lying trap states. Allowance is made for spin splitting all these arising the parallel antiparallel arrangement electron spins relative those prevailing on cationic sites. It shown under normal circumstances fraction f occupied sites reduced Seebeck coefficient S related S≊log f. Hence, any approximations, conductivity measurements can be used estimate densities mobilities, respectively. In various limiting cases results reduce three well‐known approximations. emphasized standard ought considerable caution; particular, it difficult realize experimental situation corresponding intrinsic regime.