Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures
作者： Hai-Bo Fan , Xin-Liang Zheng , Si-Cheng Wu , Zhi-Gang Liu , He-Bao Yao
DOI: 10.1088/1674-1056/21/3/038101
关键词: Epitaxy 、 Desorption 、 Chemical state 、 Crystal 、 Nanocrystalline material 、 Metalorganic vapour phase epitaxy 、 Chemical vapor deposition 、 Analytical chemistry 、 Stoichiometry 、 Materials science
摘要: ZnO nanocrystalline films are prepared on Si substrates at different temperatures by using metal-organic chemical vapour deposition (MOCVD). It is observed that when the growth temperature low, stoichiometric ratio between Zn and O atoms has a large deviation from ideal of 1:1. The grains in film have small sizes not well crystallized, resulting poor photoluminescence (PL) property. When increased to an appropriate value, Zn/O becomes optimized, most combined into Zn—O bonds. Then good crystal quality PL If fairly high, interfacial mutual diffusion substrate epitaxial appears, desorption process oxygen enhanced. However, it no effect still best
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