Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers
作者： Jianhui Zhang , Xueqing Li , Petre Alexandrov , Terry Burke , Jian H. Zhao
关键词: Ion implantation 、 Silicon carbide 、 Bipolar junction transistor 、 Power semiconductor device 、 Common emitter 、 Transistor 、 Optoelectronics 、 Voltage 、 Electrical engineering 、 Power electronics 、 Materials science
摘要: This letter reports the first 4H-SiC power bipolar junction transistor (BJT) with double base epilayers which is completely free of ion implantation and hence implantation-induced crystal damages high-temperature activation annealing-induced surface roughness. Based on this novel design implantation-free process, a BJT was fabricated to reach an open collector-to-emitter blocking voltage over 1300 V, common-emitter current gain up 31. Improvements reliability have also been observed, including less forward drift (< 2%) no significant degradation in active region.
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