1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
作者： Jian Hui Zhang , Jian Wu , Petre Alexandrov , Terry Burke , Kuang Sheng
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.527-529.1417
关键词:
摘要: This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit blocking voltage VCEO=1,836 V has been achieved for a drift layer only 12 μm, doped to 6.7x1015 cm-3. The collector current measured single cell BJT with active area 0.61 mm2 is up IC=9.87 A (JC=1618 A/cm2). 7.64 (JC=1252 A/cm2) at VCE=5.9 saturation region, corresponding absolute specific on-resistance (RSP_ON) 4.7 m9·cm2. From VCE=2.4 VCE= 5.8 V, differential RSP_ON 3.9 gain about 8.8 Ic=5.3 (869 shows V2/RSP_ON 717 MW/cm2, which highest value reported date high-voltage high-current BJTs. verylarge 11.3 also demonstrated.
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