kuang sheng
机构: Professor of Electrical Engineering, Zhejiang University
每年引用次数
引用次数
引用: 6,520
H-指数: 40
I10-指数 : 134
出版物: 352
A study of oxide reliability limitation on different field plate based termination techniques for SiC power devices
Shuntao Hu , Kuang Sheng
international power electronics and motion control conference 2 868 -872
2004
Recent Advances in Wide Bandgap Power Devices
Kuang Sheng
Meeting Abstracts ( 30) 2539 -2539
2012
Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact
Shu Yang , Kuang Sheng , Shaowen Han
IEEE Electron Device Letters 42 ( 3) 300 -303
14
2021
The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes.
Hongyi Xu , Na Ren , Qing Guo , Kuang Sheng
Materials 14 ( 3) 663
2021
Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors
Hongyi Xu , Na Ren , Qing Guo , Kuang Sheng
IEEE Transactions on Electron Devices 68 ( 3) 1181 -1184
2021
Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress
Na Ren , Kuang Sheng , Zijian Gao , Qing Guo
ieee workshop on wide bandgap power devices and applications
2020
Thermal Resistance and Capacitance Characteristics of A 4-in-1 Integrated Power Control Unit (PCU) Module for Hybrid Electrical Vehicle (HEV)
Shu Yang , Kuang Sheng , Maosheng Zhang
international power electronics and motion control conference
2020
Investigation on Thermal Resistance and Capacitance Characteristics of a Highly Integrated Power Control Unit Module
Shu Yang , Kuang Sheng , Maosheng Zhang , Yu Bai
Electronics 10 ( 8) 958
2021
Analysis on reverse recovery characteristic of SiC MOSFET intrinsic diode
Zhaohui Wang , Jiajia Ouyang , Junming Zhang , Xinke Wu
2014 IEEE Energy Conversion Congress and Exposition (ECCE) 2832 -2837
34
2014
Analysis of stray inductance's influence on SiC MOSFET switching performance
Zhaohui Wang , Junming Zhang , Xinke Wu , Kuang Sheng
2014 IEEE Energy Conversion Congress and Exposition (ECCE) 2838 -2843
37
2014
Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases
Zhengyun Zhu , Hongyi Xu , Li Liu , Na Ren
IEEE Journal of Emerging and Selected Topics in Power Electronics 1 -1
2020
A field effect transistor using highly nitrogen-doped CVD diamond for power device applications
Yoko Yokoyama , Xueqing Li , Kuang Sheng , Andrei Mihaila
Applied Surface Science 216 ( 1) 483 -489
3
2003
Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs
Jian Hui Zhao , Peter Alexandrov , Yu Zhu Li , Larry X Li
Materials Science Forum 1191 -1194
13
2006
1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
Jian Hui Zhang , Jian Wu , Petre Alexandrov , Terry Burke
Materials Science Forum 1417 -1420
12
2006
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
Na Ren , Hao Hu , Xiaofeng Lyu , Jiupeng Wu
Solid-state Electronics 152 33 -40
29
2019
Channel Hot-Carrier Effect of 4H-SiC MOSFET
Liang Chun Yu , Kin P. Cheung , John S. Suehle , Jason P. Campbell
Materials Science Forum 615-617 813 -816
6
2009
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Liang Chun Yu , Kin P. Cheung , Greg Dunne , Kevin Matocha
Materials Science Forum 805 -808
5
2010
Wafer-Level Hall Measurement on SiC MOSFET
Liang Chun Yu , Kin P. Cheung , Vinayak Tilak , Greg Dunne
Materials Science Forum 979 -982
4
2010
Ab initio study of tunable band gap of monolayer and bilayer phosphorene by the vertical electronic field
Tao Wang , Wei Guo , Luowei Wen , Yan Liu
Journal of Wuhan University of Technology-Mater. Sci. Ed. 32 ( 1) 213 -216
4
2017
Flow Boiling on Heterogeneous Wetting Surface in a Vertical Narrow Microchannel
Yuhao Lin , Junye Li , Kan Zhou , Wei Li
ASME 2020 18th International Conference on Nanochannels, Microchannels, and Minichannels collocated with the ASME 2020 Heat Transfer Summer Conference and the ASME 2020 Fluids Engineering Division Summer Meeting
2020