Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors

摘要: For the termination in high-voltage SiC thyristor, this article proposes a single-mask implantation-free solution named aperture density modulation technique. Using technique, etching profile on epitaxial layer can be controlled by layout mask. Thus, it directly form smoothly tapered junction extension with customizable slope profile. The experiments confirm control ability profiles length from 200 to 400 ${\mu } \text{m}$ . fabricated devices blocking voltage near 8 kV (~80%) demonstrate feasibility as numerical simulations present potential maintain breakdown within 120 Therefore, low-cost for bipolar is expected using