5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
作者： Hossein Elahipanah , Arash Salemi , Carl-Mikael Zetterling , Mikael Östling
关键词:
摘要: Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench termination extension have been fabricated. The maximum current gain of 40 at a density 370 A/ $\mathrm{cm}^{2}$ is obtained for the device an active area 0.065 $\mathrm{mm}^{2}$ . A open-base breakdown voltage (BV) 5.85 kV measured, which 93% theoretical BV. specific on-resistance ( $R_{\mathrm{{\scriptstyle ON}}}$ ) 28 m $\Omega \cdot {\rm cm^{2}}$ was obtained.
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