Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs
作者： Yuan Lei , Song Qingwen , Tang Xiaoyan , Zhang Yimeng , Yang Shuai
DOI: 10.1016/J.SPMI.2016.12.006
关键词:
摘要: Abstract The optimum range of the base electron lifetime (τnB0) in silicon carbide (SiC) bipolar junction transistors (BJTs) is qualitatively investigated this paper, considering both static and dynamic performance. TCAD simulation results show that there tradeoff between current gain (β) turn-off time (tF). With τnB0 increasing, β tF increase. However, with a fixed width, transport factor tends toward saturation when exceeds certain value. Thus, eclectic values different thickness are obtained. influence drive also discussed. According to charge control theory, excessive storage caused by overdrive has great on delay (tD). To solve this, suitable necessary. For common 4H-SiC BJT structure, appropriate under variable collector doping concentration suggested.
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