MOCVD Growth of ZnSxSe1-xEpitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and Se
作者： Hiroshi Mitsuhashi , Iwao Mitsuishi , Hiroshi Kukimoto
DOI: 10.1143/JJAP.24.L864
关键词: Chemical vapor deposition 、 Analytical chemistry 、 Crystal growth 、 Metalorganic vapour phase epitaxy 、 X-ray crystallography 、 Optics 、 Chemistry 、 Thin film 、 Zinc 、 Microstructure 、 Epitaxy 、 General Engineering 、 General Physics and Astronomy
摘要: ZnSxSe1-x epitaxial layers have been grown on GaAs (100) substrates by metalorganic chemical vapor deposition (MOCVD) using Zn-, S- and Se-alkyls. With this source combination, the premature reaction typically encountered in conventional MOCVD of zinc chalcogenides Zn-alkyls H2S or H2Se can be eliminated. The composition is easily controlled transport rates High crystalline quality lattice matched samples evident from surface morphology line width double crystal X-ray diffraction.
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ipap.jp参考文章(1)
Hiroshi Mitsuhashi, Iwao Mitsuishi, Masashi Mizuta, Hiroshi Kukimoto, Coherent Growth of ZnSe on GaAs by MOCVD Japanese Journal of Applied Physics. ,vol. 24, pp. L578- L580 ,(1985) , 10.1143/JJAP.24.L578