Origin of donor and acceptor species in undoped ZnSe grown by low‐pressure metalorganic chemical vapor deposition
作者： Keizo Morimoto
DOI: 10.1063/1.342444
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摘要: Effects of the [H2 Se]/[Dimethylzinc] source ratio on electrical properties in temperature range 15–300 K and cathodoluminescence at 77 have been investigated for undoped ZnSe films grown one deposition run (100)GaAs substrates 350 °C by metalorganic chemical vapor deposition. The correlated with each other depended degrees deviation from stoichiometry. dominant donor is identified selenium vacancy dependence concentration film thickness. Two kinds acceptors were introduced according to They are tentatively associated NSe NaZn . Extended lattice defects which reduce electron mobility favored high ratios they seem a principal factor high‐resistive property this material.
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