Deposition of high-Tc superconducting Y-Ba-Cu-O thin films at low temperatures using a plasma-enhanced organometallic chemical vapor deposition approach

作者: Jing Zhao , Henry O. Marcy , Lauren M. Tonge , Bruce W. Wessels , Tobin J. Marks

DOI: 10.1016/0038-1098(90)90716-O

关键词: Thin filmAnalytical chemistryPlasma-enhanced chemical vapor depositionPulsed laser depositionHybrid physical-chemical vapor depositionCombustion chemical vapor depositionChemistryPlasma processingCarbon filmChemical vapor deposition

摘要: A plasma-enhanced organometallic chemical vapor deposition process is reported for the preparation of YBa2Cu3O7-x thin films using two differing rf plasma coupling configurations. For grown under a direct glow, phase not produced in asdeposited state. However, when plasma-activated nitrous oxide used as reactant gas downstream reactor configuration, superconducting are formed situ at substrate temperature 610°C. Such have low carbon content and mirror-like surface which free voids. These preliminary results indicate that fabrication high-Tc by feasible.

参考文章(14)
Jing Zhao, Klaus-Hermann Dahmen, Henry O. Marcy, Lauren M. Tonge, Bruce W. Wessels, Tobin J. Marks, Carl R. Kannewurf, Low pressure organometallic chemical vapor deposition of high-Tc superconducting YBa2Cu3O7−δ films Solid State Communications. ,vol. 69, pp. 187- 189 ,(1989) , 10.1016/0038-1098(89)90389-X
Toshiyuki Aida, Akira Tsukamoto, Kazushige Imagawa, Tokuumi Fukazawa, Sakae Saito, Keijiro Shindo, Kazumasa Takagi, Katsuki Miyauchi, Thin Film Growth of YBa 2 Cu 3 O 7− x by ECR Oxygen Plasma Assisted Reactive Evaporation Japanese Journal of Applied Physics. ,vol. 28, ,(1989) , 10.1143/JJAP.28.L635
Masaru Shimizu, Yoojiro Matsueda, Tadashi Shiosaki, Akira Kawabata, Growth of ZnO films by the plasma-enhanced metalorganic chemical vapor deposition technique Journal of Crystal Growth. ,vol. 71, pp. 209- 219 ,(1985) , 10.1016/0022-0248(85)90064-8
A. D. Huelsman, R. Reif, C. G. Fonstad, Plasma‐enhanced metalorganic chemical vapor deposition of GaAs Applied Physics Letters. ,vol. 50, pp. 206- 208 ,(1987) , 10.1063/1.97662
K. Mizuno, M. Miyauchi, K. Setsune, K. Wasa, Low‐temperature deposition of Y‐Ba‐Cu‐O films on a CaF2/GaAs substrate Applied Physics Letters. ,vol. 54, pp. 383- 385 ,(1989) , 10.1063/1.101379
L. G. Meiners, Indirect plasma deposition of silicon dioxide Journal of Vacuum Science and Technology. ,vol. 21, pp. 655- 658 ,(1982) , 10.1116/1.571807
S. Prakash, D. M. Umarjee, H. J. Doerr, C. V. Deshpandey, R. F. Bunshah, Superconducting films growninsituby the activated reactive evaporation process Applied Physics Letters. ,vol. 55, pp. 504- 506 ,(1989) , 10.1063/1.101571
Jing Zhao, Klaus‐Hermann Dahmen, Henry O. Marcy, Lauren M. Tonge, Tobin J. Marks, Bruce W. Wessels, Carl R. Kannewurf, Organometallic chemical vapor deposition of highTcsuperconducting films using a volatile, fluorocarbon‐based precursor Applied Physics Letters. ,vol. 53, pp. 1750- 1752 ,(1988) , 10.1063/1.100473
H. Surr, Ch. Gehr, H. Holzschuh, F. Schmaderer, G. Wahl, Th. Kruck, A. Kinnen, Thermal and plasma enhanced CVD OF HTc-superconductors Physica C: Superconductivity. ,vol. 153-155, pp. 784- 785 ,(1988) , 10.1016/S0921-4534(88)80087-X
X. D. Wu, A. Inam, M. S. Hegde, B. Wilkens, C. C. Chang, D. M. Hwang, L. Nazar, T. Venkatesan, S. Miura, S. Matsubara, Y. Miyasaka, N. Shohata, High critical currents in epitaxial YBa2Cu3O7−xthin films on silicon with buffer layers Applied Physics Letters. ,vol. 54, pp. 754- 756 ,(1989) , 10.1063/1.101471