Fabrication of a heterostructure device with Au/PPani―TiO2/ITO configuration and study of device parameters including current conduction mechanism
作者： Amreen Ara Hussain , Arup Ratan Pal , Heremba Bailung , Joyanti Chutia , Dinkar S Patil
DOI: 10.1088/0022-3727/46/32/325301
关键词: Heterojunction 、 Space charge 、 Optoelectronics 、 Polyaniline 、 Sputtering 、 Titanium 、 Schottky diode 、 Schottky barrier 、 Titanium dioxide 、 Materials science
摘要: Polyaniline based composites incorporating titanium dioxide have been synthesized by an alternative pathway using reactive magnetron sputtering of and plasma polymerization aniline monomer. Structural, optical morphological characterizations polymerized (PPani) (TiO2) (PPani‐TiO2) reveal the evidence for incorporation TiO2 in PPani matrix. A hybrid heterostructure device having PPani‐TiO2 composite with a top gold (Au) layer bottom indium-tin oxide (ITO) is fabricated. The developed exhibits rectifying behaviour indicating formation Schottky contact between Au PPani‐TiO2. detailed electrical measurement performed under different temperatures. ideality factor (n) barrier height (φB) heterojunction diode at room temperature (300K) are found to be 1.28 0.43eV, respectively. Possible conduction mechanisms examined various plotting curve fitting methods space charge limited mechanism (SCLC), emission Poole‐Frenkel (PF) mechanism. shows best fit SCLC process as compared other including PF emission. (Some figures may appear colour only online journal)
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