Electrical conduction mechanisms of metal∕La2O3∕Si structure

摘要: Metal-oxide-semiconductor capacitors that incorporate La2O3 dielectric films were deposited by radio frequency magnetron sputtering. In this work, the essential structures and electrical properties of thin investigated. Capacitance–voltage, energy dispersive x-ray spectrometry, transmission electron microscopy analyses reveal an interfacial layer was formed, subsequently reducing effective constant 700°C annealed films. The dominant conduction mechanism Al∕La2O3∕p-Si metal-lanthanum oxide-semiconductor capacitor is space-charge-limited current from 300to465K in accumulation mode. Three different regions, Ohm’s law region, trap-filled-limited Child’s observed current-density–voltage (J–V) characteristics at room temperature. activation traps calculated Arrhenius plots about 0.21±0.01eV. electronic mobility, trap density, relaxation time, density states i...