Characterization of La2 O 3 and Yb2 O 3 Thin Films for High-k Gate Insulator Application
作者： S. Ohmi , C. Kobayashi , I. Kashiwagi , C. Ohshima , H. Ishiwara
DOI: 10.1149/1.1581278
关键词: Lattice energy 、 Current density 、 Gate insulator 、 Thin film 、 Optoelectronics 、 Band gap 、 High-κ dielectric 、 Characterization (materials science) 、 Materials science 、 Capacitance
摘要: Rare earth oxides, such as La 2 O 3 and Yb , deposited on Si(100) were investigated for high-k gate insulator applications. has the largest bandgap smallest lattice energy among rare whileYb a smaller larger compared to . showed excellent electrical properties, small capacitance equivalent thickness low leakage current density with smooth film surface interface after rapid thermal annealing (RTA) at 400-600°C. On other hand, of thin was easily roughened RTA even 400°C, higher The difference in characteristics films considered be attributed their energy. able keep amorphous phase least up 600°C RTA, this seems promising future
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