Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

摘要: We report on the electrical and microstructural characteristics of La- Y-based oxides grown silicon substrates by ultrahigh vacuum atomic beam deposition, in order to examine their potential as alternate gate dielectrics for Si complementary metal oxide semiconductor technology. have examined issues polycrystallinity interfacial formation these films effect leakage currents ability deposit with low thickness. observe that does not result unacceptably high currents. show significant penetration both types films. find SiO2 is much thicker at ∼1.5 nm compared La-based where thickness <0.5 nm. also while excellent properties, La based exhibit a large flat band voltage shift indicative positive charge