p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy
作者： F. X. Xiu , Z. Yang , L. J. Mandalapu , J. L. Liu , W. P. Beyermann
DOI: 10.1063/1.2170406
关键词: Epitaxy 、 Exciton 、 Dopant 、 Acceptor 、 Optoelectronics 、 Electron diffraction 、 Molecular beam epitaxy 、 Materials science 、 Photoluminescence 、 Doping 、 Analytical chemistry
摘要: Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron patterns indicate that high-quality single crystalline (112¯0) obtained. Hall resistivity measurements show the phosphorus-doped have high hole concentrations low resistivities at room temperature. Photoluminescence (PL) 8 K reveal dominant acceptor-bound exciton emission an energy of 3.317 eV. The acceptor level phosphorus dopant is estimated to be 0.18 eV above valence band from PL spectra, which also consistent temperature dependence measurements.
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researchgate.net 参考文章(24)
Veeramuthu Vaithianathan, Byung-Teak Lee, Sang Sub Kim, Preparation of As-doped p-type ZnO films using a Zn3As2∕ZnO target with pulsed laser deposition Applied Physics Letters. ,vol. 86, pp. 062101- ,(2005) , 10.1063/1.1854748
Chris G. Van de Walle, Hydrogen as a cause of doping in zinc oxide Physical Review Letters. ,vol. 85, pp. 1012- 1015 ,(2000) , 10.1103/PHYSREVLETT.85.1012
J. M. Bian, X. M. Li, C. Y. Zhang, W. D. Yu, X. D. Gao, p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions Applied Physics Letters. ,vol. 85, pp. 4070- 4072 ,(2004) , 10.1063/1.1808229
Tomoya Shitara, Karl Eberl, Electronic properties of InGaP grown by solid‐source molecular‐beam epitaxy with a GaP decomposition source Applied Physics Letters. ,vol. 65, pp. 356- 358 ,(1994) , 10.1063/1.112373
T. S. Jeong, M. S. Han, C. J. Youn, Y. S. Park, Raman scattering and photoluminescence of As ion-implanted ZnO single crystal Journal of Applied Physics. ,vol. 96, pp. 175- 179 ,(2004) , 10.1063/1.1756220
C. R. Gorla, N. W. Emanetoglu, S. Liang, W. E. Mayo, Y. Lu, M. Wraback, H. Shen, Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition Journal of Applied Physics. ,vol. 85, pp. 2595- 2602 ,(1999) , 10.1063/1.369577
Dae-Kue Hwang, Hyun-Sik Kim, Jae-Hong Lim, Jin-Yong Oh, Jin-Ho Yang, Seong-Ju Park, Kyoung-Kook Kim, David C Look, YS Park, None, Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering Applied Physics Letters. ,vol. 86, pp. 151917- ,(2005) , 10.1063/1.1895480
F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, W. P. Beyermann, High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy Applied Physics Letters. ,vol. 87, pp. 152101- ,(2005) , 10.1063/1.2089183
S. B. Zhang, S.-H. Wei, Alex Zunger, Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO Physical Review B. ,vol. 63, pp. 075205- ,(2001) , 10.1103/PHYSREVB.63.075205
X. Li, Y. Yan, T. A. Gessert, C. L. Perkins, D. Young, C. DeHart, M. Young, T. J. Coutts, Chemical vapor deposition-formed p-type ZnO thin films Journal of Vacuum Science and Technology. ,vol. 21, pp. 1342- 1346 ,(2003) , 10.1116/1.1584036