p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions
作者： J. M. Bian , X. M. Li , C. Y. Zhang , W. D. Yu , X. D. Gao
DOI: 10.1063/1.1808229
关键词: Seebeck coefficient 、 Scanning electron microscope 、 Doping 、 Photoluminescence 、 Analytical chemistry 、 Thermoelectric effect 、 Wide-bandgap semiconductor 、 Electrical resistivity and conductivity 、 X-ray crystallography 、 Materials science
摘要: Nitrogen-doped p-type ZnO (ZnO:N) films have been achieved by ultrasonic spray pyrolysis at atmosphere. The high structural quality of the obtained was confirmed x-ray diffraction, scanning electron microscopy, and photoluminescence spectra. Hall-effect Seebeck-effect measurements indicate that film shows a low resistivity 3.02×10−2Ωcm, carrier concentration 8.59×1018cm−3, mobility 24.1cm2∕Vs, Seebeck coefficient 408.2μV∕K room temperature. Furthermore, two-layer structured p–n homojunctions were prepared depositing n-type layer on ZnO:N layer. current–voltage curve derived from structure clearly typical rectifying characteristic junctions.
scitation.org
harvard.edu
aip.org 
sci-hub.se 参考文章(12)
LD Chen, T Kawahara, XF Tang, Takashi Goto, Toshio Hirai, Jeffrey S Dyck, Wei Chen, Ctirad Uher, None, Anomalous barium filling fraction and n-type thermoelectric performance of BayCo4Sb12 Journal of Applied Physics. ,vol. 90, pp. 1864- 1868 ,(2001) , 10.1063/1.1388162
A. Tiburcio-Silver, J.C. Joubert, M. Labeau, Études sur la croissance, la structure et la composition de couches minces de ZnO et ZnO dopé a l'indium, obtenues par procédé pyrosol Thin Solid Films. ,vol. 197, pp. 195- 214 ,(1991) , 10.1016/0040-6090(91)90232-M
L. G. Wang, Alex Zunger, Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO. Physical Review Letters. ,vol. 90, pp. 256401- ,(2003) , 10.1103/PHYSREVLETT.90.256401
P Nunes, E Fortunato, P Tonello, F Braz Fernandes, P Vilarinho, R Martins, Effect of different dopant elements on the properties of ZnO thin films Vacuum. ,vol. 64, pp. 281- 285 ,(2002) , 10.1016/S0042-207X(01)00322-0
Yanfa Yan, S. B. Zhang, S. T. Pantelides, Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO Physical Review Letters. ,vol. 86, pp. 5723- 5726 ,(2001) , 10.1103/PHYSREVLETT.86.5723
CH Park, SB Zhang, Su-Huai Wei, None, Origin of p -type doping difficulty in ZnO: The impurity perspective Physical Review B. ,vol. 66, pp. 073202- ,(2002) , 10.1103/PHYSREVB.66.073202
Yasunori Morinaga, Keijiro Sakuragi, Norifumi Fujimura, Taichiro Ito, Effect of Ce doping on the growth of ZnO thin films Journal of Crystal Growth. ,vol. 174, pp. 691- 695 ,(1997) , 10.1016/S0022-0248(97)00045-6
J. M. Bian, X. M. Li, X. D. Gao, W. D. Yu, L. D. Chen, Deposition and electrical properties of N–In codoped p-type ZnO films by ultrasonic spray pyrolysis Applied Physics Letters. ,vol. 84, pp. 541- 543 ,(2004) , 10.1063/1.1644331
T. Makino, C. H. Chia, Nguen T. Tuan, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, H. Koinuma, Radiative and nonradiative recombination processes in lattice-matched (Cd,Zn)O/(Mg,Zn)O multiquantum wells Applied Physics Letters. ,vol. 77, pp. 1632- 1634 ,(2000) , 10.1063/1.1308540
Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara, Jes Asmussen, RajK. Thareja, Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition Thin Solid Films. ,vol. 435, pp. 49- 55 ,(2003) , 10.1016/S0040-6090(03)00383-3