High performance ZnO-based laser diodes
作者： Jianlin Liu , Sheng Chu
DOI:
关键词: Materials science 、 Layer (electronics) 、 Ultraviolet 、 Optoelectronics 、 Diode 、 High power output 、 Doping 、 Laser 、 Lasing threshold 、 Quantum well
摘要: Systems and methods for electrically pumped, surface-emitting edge emitting ZnO ultraviolet diode lasers are disclosed. The laser may be fabricated using growth processes (e.g., MBE) to form Sb-doped as a p-type layer doped an n-type layer. ZnO-based quantum well structures further formed in between the n- layers. layers wells grown columnar which act resonant cavities generated light, significantly improving light amplification providing high power output. For example, lasing at around 380 nm was demonstrated about room temperature threshold current density of 10 A/cm2. output measured 11.3 μW 130 mA driving current.
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