Ion implantation and diamond: some recent results on growth and doping
作者： Johan F. Prins
DOI: 10.1016/0040-6090(92)90493-U
关键词: Boron 、 Mineralogy 、 Analytical chemistry 、 Annealing (metallurgy) 、 Copper 、 Transmission electron microscopy 、 Diamond 、 Material properties of diamond 、 Ion implantation 、 Materials science 、 Doping
摘要: Abstract Results on the growth and doping of diamond by means ion implantation are reported. Growth was effected high energy carbon-ion into copper, inducing diffusion implanted atoms to copper surface. Transmission electron microscopy analysis showed that, although oriented graphite generated most time, diffraction from carbonaceous grains, ascribable growth, also occured. Improved natural purity (type IIa) using cold-implantation rapid-annealing (CIRA) technique obtained implanting boron a suitable damage range distribution (while maintaining substrate at liquid nitrogen temperature) followed multistep, rapid annealing cycle. Within an order magnitude, doped layer behaved electrically like p-type semiconducting IIb) diamond. Using gold-plated contact probe, reasonable diode characteristics could be measured after 1400 °C.
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