Measurement of the conductance distribution function at a quantum Hall transition.
作者： D. H. Cobden , E. Kogan
DOI: 10.1103/PHYSREVB.54.R17316
关键词: Distribution function 、 Quantum point contact 、 Magnetic field 、 Physics 、 Conductance quantum 、 Quantum spin Hall effect 、 Quantum Hall effect 、 Conductance 、 Condensed matter physics 、 MOSFET
摘要: We study experimentally the reproducible conductance fluctuations between quantum Hall plateaus in of two-terminal submicrometer silicon MOSFET’s. For dramatic at insulator-to-first-plateau transition we find a distribution that is approximately uniform zero and e 2 /h. point out this consistent with prediction random S-matrix theory for conductor single-channel leads magnetic field. @S0163-1829~96!51948-X#
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