Semiconductor devices suitable for use in cryogenic environments
作者： B. Lengeler
DOI: 10.1016/0011-2275(74)90206-9
关键词: Varicap 、 Bipolar junction transistor 、 Semiconductor 、 Diode 、 Materials science 、 Transistor 、 Zener diode 、 Optoelectronics 、 Field-effect transistor 、 Semiconductor device
摘要: Abstract The low temperature behaviour of semiconductor diodes, Zener varactor tunnel bipolar transistors, and field effect transistors is investigated. It discussed which materials devices are best suited for use at 4.2 K. A great number currently available diodes have been tested. ones working satisfactory K listed their performance in cryogenic environments described.
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