Numerical Simulation of Resonant Tunneling Diodes with a Quantum-Drift-Diffusion Model

作者: Stefano Micheletti , Riccardo Sacco , Paolo Simioni

DOI: 10.1007/978-3-642-55872-6_34

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摘要: We deal with a Quantum-Drift-Diffusion (QDD) model for the description of transport in semiconductors which generalizes standard Drift-Diffusion (DD) through extra terms that take into account some quantum dispersive corrections. also study numerically influence on I-V curve electron effective mass, barrier height and width, ambient temperature. The performance several linearization algorithms, i.e. two Gummel-type iterations fully-coupled Newton method are compared.

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