Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks
作者： CZ Zhao , MB Zahid , JF Zhang , Guido Groeseneken , Robin Degraeve
DOI: 10.1016/J.MEE.2005.04.028
关键词: Trapping 、 High-κ dielectric 、 Cross section (physics) 、 SILC 、 Space charge 、 Condensed matter physics 、 First order 、 Electron 、 Chemistry 、 Thermal conduction
摘要: This paper focuses on electron traps in HfO2/SiO2 stacks. Three issues are addressed: the impact of measurement techniques trapping, dependence trapping conduction mechanism, and kinetics. It will be shown that traditional 'DC Id∼Vg' technique can underestimate trap density. Trapping is sensitive to mechanism. The trap-assisted conduction, such as SILC thermally enhanced contributes little trapping. Possible explanations for this phenomenon explored. follows first order model capture cross section estimated.
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