Investigation of Abnormal $V_{\rm TH}/V_{\rm FB}$ Shifts Under Operating Conditions in Flash Memory Cells With $ \hbox{Al}_{2}\hbox{O}_{3}$ High- $\kappa$ Gate Stacks
作者： Baojun Tang , Wei Dong Zhang , Jian Fu Zhang , G. Van den Bosch , M. Toledano-Luque
关键词:
摘要: Al2O3 high-κ stack is a strong candidate as the dielectric layer in Flash memory cells for technology generations beyond sub-20 nm. In this paper, cause of abnormal VTH/VFB shift at low operating electric fields investigated, i.e., reduces positive gate biases and increases negative biases. It found that instability does not originate from electrons trapping/detrapping nor relaxation. For first time, extensive experimental evidences show caused by as-grown mobile charges layers generated postdeposition annealing 1000 °C or above. Its impacts on program/erase windows read/pass disturbance are also evaluated.
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