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DOI: 10.1016/J.MICROREL.2014.07.089
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摘要: Abstract Highly porous low-k dielectrics are essential for downscaling of the interconnects 20–10 nm technologies. A planar capacitor test vehicle was used to investigate intrinsic time dependent dielectric breakdown (TDDB) reliability and origin an observed C–V hysteresis studied. We hypothesize that is caused by donor-like traps present in bulk but not electron/hole trapping or mobile charges. It proposed porogen/carbon residues source these traps. Using Ileak vs. measurements, it found accelerate degradation due enhanced EOX, causing a localized partial breakdown. The TDDB film improved adding sealing layer as such blocked discharging.