Interaction of Defect and Domain Structures of Triglycine Sulphate Crystals in Ferroelectric and Paraelectric States
作者： G. I. DISTLER , V. P. KONSTANTINOVA , Y. M. GERASIMOV , G. A. TOLMACHEVA
DOI: 10.1038/218762A0
关键词: Materials science 、 Crystal 、 Condensed matter physics 、 Dielectric 、 Real structure 、 Ferroelectricity 、 Domain (ring theory)
摘要: THE interaction of domain and defect structures in ferroelectrics and, particular, triglycine sulphate (TGS) accounts for many important properties this class crystal. An example is the restoring structure after repolarization processes (the “memory” crystals) associated with real crystals. The TGS, which has been studied by etching1,2, electroluminescence3 charged powder technique4, related to only one kind defect, however—dislocations5,6—and it stated that there no correlation between domains dislocations.
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