作者: Baochen Liao , Bram Hoex , Armin G. Aberle , Dongzhi Chi , Charanjit S. Bhatia
DOI: 10.1063/1.4885096
关键词: Inorganic chemistry 、 Silicon nitride 、 Atomic layer deposition 、 Amorphous solid 、 Silicon oxide 、 Optoelectronics 、 Crystalline silicon 、 Materials science 、 Titanium oxide 、 Passivation 、 Silicon
摘要: In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The provided by the ALD TiOx is activated a post-deposition anneal and subsequent light soaking treatment. Ultralow effective recombination velocities down 2.8 cm/s 8.3 cm/s, respectively, achieved n-type p-type float-zone c-Si wafers. Detailed analysis confirms nearly stoichiometric, have no significant level contaminants, amorphous nature. found be stable after storage in dark for eight months. These results also capable providing excellent surfaces comparable oxide, nitride, aluminum oxide. addition, it well known has an optimal refractive index 2.4 visible range glass encapsulated solar cells, as low extinction coefficient. Thus, presented work could facilitate re-emergence field high-efficiency wafer cells.