Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

作者: Baochen Liao , Bram Hoex , Armin G. Aberle , Dongzhi Chi , Charanjit S. Bhatia

DOI: 10.1063/1.4885096

关键词: Inorganic chemistrySilicon nitrideAtomic layer depositionAmorphous solidSilicon oxideOptoelectronicsCrystalline siliconMaterials scienceTitanium oxidePassivationSilicon

摘要: In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The provided by the ALD TiOx is activated a post-deposition anneal and subsequent light soaking treatment. Ultralow effective recombination velocities down 2.8 cm/s 8.3 cm/s, respectively, achieved n-type p-type float-zone c-Si wafers. Detailed analysis confirms nearly stoichiometric, have no significant level contaminants, amorphous nature. found be stable after storage in dark for eight months. These results also capable providing excellent surfaces comparable oxide, nitride, aluminum oxide. addition, it well known has an optimal refractive index 2.4 visible range glass encapsulated solar cells, as low extinction coefficient. Thus, presented work could facilitate re-emergence field high-efficiency wafer cells.

参考文章(25)
Jérémy Barbé, Andrew Francis Thomson, Er‐Chien Wang, Keith McIntosh, Kylie Catchpole, None, Nanoimprinted Tio 2 sol-gel passivating diffraction gratings for solar cell applications Progress in Photovoltaics. ,vol. 20, pp. 143- 148 ,(2012) , 10.1002/PIP.1131
Andrew F. Thomson, Keith R. McIntosh, Light-enhanced surface passivation of TiO2-coated silicon Progress in Photovoltaics. ,vol. 20, pp. 343- 349 ,(2012) , 10.1002/PIP.1132
J. J. H. Gielis, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation Journal of Applied Physics. ,vol. 104, pp. 073701- ,(2008) , 10.1063/1.2985906
Lianne M. Doeswijk, Hugo H.C. de Moor, Horst Rogalla, Dave H.A. Blank, Exploring the deposition of oxides on silicon for photovoltaic cells by pulsed laser deposition Applied Surface Science. ,vol. 186, pp. 453- 457 ,(2002) , 10.1016/S0169-4332(01)00735-8
Ing-Song Yu, Yu-Wun Wang, Hsyi-En Cheng, Zu-Po Yang, Chun-Tin Lin, Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells International Journal of Photoenergy. ,vol. 2013, pp. 431614- ,(2013) , 10.1155/2013/431614
B Liao, R Stangl, F Ma, T Mueller, F Lin, A G Aberle, C S Bhatia, B Hoex, Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation Journal of Physics D. ,vol. 46, pp. 385102- ,(2013) , 10.1088/0022-3727/46/38/385102
B. S. Richards, Comparison of TiO2 and other dielectric coatings for buried-contact solar cells: A review Progress in Photovoltaics. ,vol. 12, pp. 253- 281 ,(2004) , 10.1002/PIP.529
R. Hezel, K. Jaeger, Low‐Temperature Surface Passivation of Silicon for Solar Cells Journal of The Electrochemical Society. ,vol. 136, pp. 518- 523 ,(1989) , 10.1149/1.2096673