Concepts and prospects of passivating contacts for crystalline silicon solar cells
作者： Jimmy Melskens , Bas W. H. van de Loo , Bart Macco , Martijn F. J. Vos , Jurgen Palmans
DOI: 10.1109/PVSC.2015.7355646
关键词: Charge carrier 、 Monocrystalline silicon 、 Silicon 、 Polymer solar cell 、 Passivation 、 Engineering physics 、 Crystalline silicon 、 Quantum dot solar cell 、 Nanotechnology 、 Materials science 、 Solar cell
摘要: To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce recombination losses between photoactive part cell and metal contacts. This ideally achieved by fabricating contacts which passivate defects at surface while being simultaneously selective for only a single type charge carrier, i.e. either electrons or holes. Despite extensive research effort aimed realizing such contacts, no clear overview fundamental physics passivating has appeared yet. Therefore, we present an overview, introduce classification discuss their design guidelines future prospects.
tue.nl参考文章(40)
S.W. Glunz, D. Pysch, P. Voisin, B. McDougall, P. Borden, C.P. Chang, L. Xu, Polysilicon Tunnel Junctions as Alternates to Diffused Junctions 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain. pp. 1149- 1152 ,(2008) , 10.4229/23RDEUPVSEC2008-2DO.1.4
B. Macco, Y. Wu, D. Vanhemel, W. M. M. Kessels, High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization Physica Status Solidi-rapid Research Letters. ,vol. 8, pp. 987- 990 ,(2014) , 10.1002/PSSR.201409426
R.M. Swanson, Approaching the 29% limit efficiency of silicon solar cells photovoltaic specialists conference. pp. 889- 894 ,(2005) , 10.1109/PVSC.2005.1488274
B. Hoex, J. Schmidt, R. Bock, P. P. Altermatt, M. C. M. van de Sanden, W. M. M. Kessels, Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 Applied Physics Letters. ,vol. 91, pp. 112107- ,(2007) , 10.1063/1.2784168
B. Macco, M. F. J. Vos, N. F. W. Thissen, A. A. Bol, W. M. M. Kessels, Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells Physica Status Solidi-rapid Research Letters. ,vol. 9, pp. 393- 396 ,(2015) , 10.1002/PSSR.201510117
Yixin Zhao, Alexandre M. Nardes, Kai Zhu, Effective hole extraction using MoOx-Al contact in perovskite CH3NH3PbI3 solar cells Applied Physics Letters. ,vol. 104, pp. 213906- ,(2014) , 10.1063/1.4880899
T. Koida, H. Fujiwara, M. Kondo, High-mobility hydrogen-doped In2O3 transparent conductive oxide for a-Si:H/c-Si heterojunction solar cells Solar Energy Materials and Solar Cells. ,vol. 93, pp. 851- 854 ,(2009) , 10.1016/J.SOLMAT.2008.09.047
Corsin Battaglia, Silvia Martín de Nicolás, Stefaan De Wolf, Xingtian Yin, Maxwell Zheng, Christophe Ballif, Ali Javey, Silicon heterojunction solar cell with passivated hole selective MoOx contact Applied Physics Letters. ,vol. 104, pp. 113902- ,(2014) , 10.1063/1.4868880
Andres Cuevas, Di Yan, Misconceptions and Misnomers in Solar Cells IEEE Journal of Photovoltaics. ,vol. 3, pp. 916- 923 ,(2013) , 10.1109/JPHOTOV.2013.2238289
B Macco, D Deligiannis, S Smit, R A C M M van Swaaij, M Zeman, W M M Kessels, Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO Semiconductor Science and Technology. ,vol. 29, pp. 122001- ,(2014) , 10.1088/0268-1242/29/12/122001