Surface patterning of GaAs under irradiation with very heavy polyatomic Au ions
作者： L. Bischoff , R. Böttger , K.-H. Heinig , S. Facsko , W. Pilz
DOI: 10.1016/J.APSUSC.2014.03.166
关键词: Substrate (electronics) 、 Polyatomic ion 、 Atom 、 Triatomic molecule 、 Irradiation 、 Atomic physics 、 Monatomic ion 、 Range (particle radiation) 、 Ion 、 Chemistry
摘要: Abstract Self-organization of surface patterns on GaAs under irradiation with heavy polyatomic Au ions has been observed. The depend the ion mass, and substrate temperature as well incidence angle ions. At room temperature, normal remains flat, whereas above 200 °C nanodroplets Ga appear after monatomic, biatomic triatomic kinetic energies in range 10–30 keV per atom. In intermediate 100–200 °C meander- dot-like form, which are not related to excess. Under oblique up 45° from normal, at flat for mon- For bi- 60° ≤ α ≤ 70° ripple have found, become shingle-like α ≥ 80°, monatomic
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