Quantitative analysis of the order of Bi ion induced dot patterns on Ge
作者： R. Böttger , L. Bischoff , S. Facsko , B. Schmidt
DOI: 10.1209/0295-5075/98/16009
关键词:
摘要: We demonstrate that the temperature-dependent focused ion beam irradiation of (100) Ge surfaces with 20 keV Bi+ ions leads to variably ordered hexagonal dot patterns. show average information gain about spatial order can be significantly increased by image preprocessing transforming power spectral density into pair correlation function. Order parameters are derived from function for comparison highly
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