Crystalline nanostructures on Ge surfaces induced by ion irradiation

摘要: Besides conventional low efficiency lithographic techniques broad ion beam irradiation is a simple and potentially mass productive technique to fabricate nanoscale patterns on various semiconductor surfaces. The main drawback of this method that the irradiated surfaces are amorphized, which strongly limits potential application these nanostructures in electronic optoelectronic devices. In work we report high-quality crystalline nanostructure formed Ge via Ar+ at elevated temperatures. This pattern formation process resembles homoepitaxy. Therefore, discussed based “reverse epitaxy” mechanism.