作者: D. S. Kireev , A. E. Ieshkin , V. S. Chernysh
DOI: 10.3103/S0027134919010107
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摘要: This paper proposes the use of surfaces with a preformed ordered nanotopography to study mechanisms evolution surface topography under ion beam irradiation. The proposed approach is used for silicon bombardment an oblique accelerated cluster ions. Samples were formed using electron lithography. was studied SEM and AFM techniques. It shown that resulting as result competition between processes sputtering redistribution atoms. effectiveness these determined by local incidence angles ions curvature. possibility obtaining asymmetric profile specified parameters selecting angle beam, irradiation dose, initial topography.