Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)
作者： M. Razeghi , P. Hirtz , R. Blondeau , J.P. Larivain , L. Noel
DOI: 10.1049/EL:19820088
关键词: Continuous wave 、 Laser 、 Semiconductor laser theory 、 Gallium arsenide 、 Optoelectronics 、 Double heterostructure 、 Materials science 、 Epitaxy 、 Diode 、 Chemical vapor deposition 、 Electrical and Electronic Engineering
摘要: Room temperature continuous wave (CW) operation at 1.5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low 200 mA DC have measured for devices with a stripe width of 9 and cavity length 300 μm. Values To high 64 K obtained, where is defined the expression Jth(T) = Jth(0) exp (T/To). Fundamental transverse mode oscillation up to an output power 10 mW.
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J.P. Hirtz, M. Razeghi, J.P. Larivain, S. Hersee, J.P. Duchemin, Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE Electronics Letters. ,vol. 17, pp. 113- 115 ,(1981) , 10.1049/EL:19810081