1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
作者： W. T. Tsang , F. K. Reinhart , J. A. Ditzenberger
DOI: 10.1063/1.93377
关键词: Active layer 、 Diode 、 Optoelectronics 、 Molecular beam 、 Current density 、 Semiconductor laser theory 、 Materials science 、 Molecular beam epitaxy 、 Double heterostructure 、 Heterojunction 、 Physics and Astronomy (miscellaneous)
摘要: We report the first successful preparation of current injection GaInAsP/InP double heterostructure lasers operating at 1.3 μm by molecular beam epitaxy. The median threshold density Jth is 3.5 kA/cm2, while lowest 1.8 kA/cm2 for broad‐area Fabry–Perot diodes 380×200 and an active layer thickness 0.2 μm. current‐temperature dependence described very closely exp (T/T0) with T0 70–87 K in temperature range 10°–65 °C. Elemental As P (red phosphorus) were used as primary sources deriving As2 P2 beams. In addition, ovens equipped recharge interlock systems. a result, growth chamber was always maintained ultrahigh vacuum condition even during recharge.
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sci-hub.se 参考文章(15)
G. H. Olsen, C. J. Nuese, M. Ettenberg, Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers Applied Physics Letters. ,vol. 34, pp. 262- 264 ,(1979) , 10.1063/1.90774
B. I. Miller, J. H. McFee, Growth of Ga y In1 − y As / InP Heterostructures by Molecular Beam Epitaxy Journal of The Electrochemical Society. ,vol. 125, pp. 1310- 1317 ,(1978) , 10.1149/1.2131669
A. Y. Cho, Recent developments in molecular beam epitaxy (MBE) Journal of Vacuum Science and Technology. ,vol. 16, pp. 275- 284 ,(1979) , 10.1116/1.569926
R. J. Nelson, Near‐equilibrium LPE growth of low threshold current density In1−xGaxAsyP1−y(λ=1.35 μm) DH lasers Applied Physics Letters. ,vol. 35, pp. 654- 656 ,(1979) , 10.1063/1.91243
S. Arai, Y. Suematsu, Y. Itaya, 1.11-1.67 µm IEEE Journal of Quantum Electronics. ,vol. 16, pp. 197- 205 ,(1980) , 10.1109/JQE.1980.1070434
K. Y. Cheng, A. Y. Cho, W. R. Wagner, W. A. Bonner, Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In‐Ga oven Journal of Applied Physics. ,vol. 52, pp. 1015- 1021 ,(1981) , 10.1063/1.328798
J.P. Duchemin, J.P. Hirtz, M. Razeghi, M. Bonnet, S.D. Hersee, GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications Journal of Crystal Growth. ,vol. 55, pp. 64- 73 ,(1981) , 10.1016/0022-0248(81)90272-4
Shun‐ichi Gonda, Yuichi Matsushima, Effect of substrate temperature on composition ratio x in molecular‐beam‐epitaxial GaAs1−xPx Journal of Applied Physics. ,vol. 47, pp. 4198- 4200 ,(1976) , 10.1063/1.323288
M. Razeghi, P. Hirtz, R. Blondeau, J.P. Larivain, L. Noel, B. de Cremoux, J.P. Duchemin, Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD) Electronics Letters. ,vol. 18, pp. 132- 133 ,(1982) , 10.1049/EL:19820088
W. T. Tsang, Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm Journal of Applied Physics. ,vol. 52, pp. 3861- 3864 ,(1981) , 10.1063/1.329852