Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors

作者: W.T. Tsang

DOI: 10.1016/S0080-8784(08)62929-4

关键词: Molecular beam epitaxySemiconductor laser theorySuperlatticeHeterojunctionLaserOptoelectronicsMaterials scienceAvalanche photodiodeQuantum wellSemiconductor

摘要: Publisher Summary This chapter reviews the basic molecular beam epitaxy (MBE) process, growth apparatus, various in situ surface diagnostic techniques, III–V semiconductor substrate preparation procedures, optimum conditions for compounds, transport and optical properties of single epilayers quantum well structures, state-of the-MBE-art lasers. Examples illustrated significant contributions made by MBE novel lasers photodetectors. These include heterostructures lasers, double-barrier double-heterostructure laser, graded-index waveguide separate-confinement heterostructure multiwavelength transverse-junction stripe ohmic contact graded band-gap avalanche photodiode (APD), superlattice APD, channeling majority-carrier photodetector. Although this review is limited to semiconductors , has been used grow a large variety other (group IV, I1–VI, IV–VI), crystal metal films, insulators.

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